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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B KTA733B EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) Low Noise : NF=1dB(Typ.). at f=1kHz Complementary to KTC945B. K D E G N A Excellent hFE Linearity. MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING -60 -50 -5 -150 625 150 -55 150 UNIT V L F H F 1 2 3 V V mA mW M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification O:70 140, Y:120 ) TEST CONDITION IC=-100 A, IE=0 IC=-1mA, IB=0 IE=-100 A, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-10V, IC=-10mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA Rg=10k , f=1kHz GR:200 400 MIN. -60 -50 -5 70 TYP. -0.1 300 4 1.0 MAX. -0.1 -0.1 400 -0.3 -1.1 7 10 V V MHz pF dB UNIT V V V A A SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (Note) VCE(sat) VBE(sat) fT Cob NF 240, 2001. 9. 14 Revision No : 2 1/2 KTA733B I C - VCE -240 COLLECTOR CURRENT I C (mA) -200 -160 -120 -0.5 -2.0 COMMON EMITTER Ta=25 C -1.5 -1.0 hFE - I C 3k DC CURRENT GAIN h FE COMMON EMITTER VCE =-6V 1k 500 300 Ta=100 C Ta=25 C -80 -40 0 I B =-0.2mA 100 50 Ta=-25 C 0 0 -1 -2 -3 -4 -5 -6 -7 30 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) TRANSITION FREQUENCY f T (MHz) -1k -500 -300 3k COMMON EMITTER I C /I B =10 fT - IC COMMON EMITTER VCE =-10V Ta=25 C 1k 500 300 -100 -50 -30 Ta =1 00 C Ta=25 C Ta=-25 C 100 50 30 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -10 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I B - VBE COMMON EMITTER VCE =-6V Pc - Ta COLLECTOR POWER DISSIPATION P C (mW) -0.8 -1.0 -1.2 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) -1k BASE CURRENT I B (A) -300 -100 -30 -10 -3 -1 -0.3 0 -0.2 -0.4 -0.6 BASE-EMITTER VOLTAGE VBE (V) 2001. 9. 14 Revision No : 2 Ta=2 5C Ta=25 C Ta=1 00 C 2/2 |
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